A method for fabricating a copper indium diselenide semiconductor film comprising use of DC magnetron sputtering apparatus to sequentially deposit a first film of copper on a substrate and a second film of indium on the copper film. Thereafter the substrate with copper and indium films is heated in the presence of gas containing selenium at a temperature selected to cause interdiffusion of the elements and formation of a high quality copper indium diselenide film. In a preferred form, an insulating substrate is used and an electrical contact is first deposited thereon in the same DC magnetron sputtering apparatus prior to deposition of the copper and indium films.
申请公布号
DE3674104(D1)
申请公布日期
1990.10.18
申请号
DE19863674104
申请日期
1986.07.10
申请人
ATLANTIC RICHFIELD CO., LOS ANGELES, CALIF., US
发明人
ERMER, JAMES H., LOS ANGELES CALIFORNIA, US;LOVE, ROBERT B., CHATSWORTH CALIFORNIA, US