| 摘要 |
<p>PURPOSE:To suppress the imperfect etching occurring in the dust, etc., produced at the time of formation of picture element electrodes and metallic films by photolithography or the shorting between the picture elements by subjecting the picture element electrodes and the metallic films to reetching. CONSTITUTION:A transparent conductive film consisting of ITO, etc., is formed on a substrate and the picture element electrodes 2 are formed by the first time of the photolithography. After a nonlinear resistance film 3 is formed by a plasma CVD device or sputtering device, etc., the metallic film 4 is formed continuously by a sputtering device, etc. The metallic film 4 and the nonlinear resistance film 3 are then patterned by the 2nd time of the photolithography. A resist 8 is so formed as to cover the picture element electrodes 2, nonlinear resistance film 3 and metallic film 4 constituting the nonlinear resistance elements in the 3rd time of the photolithography stage. Finally, shorting parts 5 between the picture element electrodes, parts 6 remained after the etching and the parts 7 of the metallic films 4 remained after the etching are removed by the etching.</p> |
