| 摘要 |
PURPOSE:To prevent non-radiative recombination of a side of a mesa structure by forming an aluminum nitride film on the side of the mesa structure having double hetero lamination structure. CONSTITUTION:On the side of a mesa structure having double hetero lamination structure formed on a semiconductor substrate 11, an aluminum nitride film 16 is formed. In order to reduce non-radiative recombination center generated on the interface between a III-V compound semiconductor and an insulation film, it is important not only to reduce stress but also to close dangling bond without changing a valence orbit of atoms on the semiconductor surface. The AIN film 16, a III-V compound semiconductor, can reduce non-radiative recombination centers. Thus light emitting efficiency can be improved. |
