| 摘要 |
PURPOSE:To obtain a thin film excellent in superconductivity in a short time by supplying an oxygen-based active species formed by high-temp. unbalanced or balanced plasma on the surface of a substrate while an oxide superconductor is formed on the substrate surface by sputtering or after the superconductor is formed. CONSTITUTION:Oxygen is introduced into a differential evacuating chamber 30 in direction of the arrow 25 through a discharge tube 21, and then introduced into a deposition chamber 10 through an orifice 50. Sputtering gaseous Ar is introduced into the deposition chamber 10 in direction of the arrow 5, the pressures in the chambers 30 and 10 and the temp. of a substrate 15 are controlled to specified values, then a power is impressed on a high-frequency power source 34 to produce plasma, and a target 40 is sputtered to form a film on the substrate 15 surface. In this case, the power from a high-frequency power source 24 is impressed on a coil 22 to produce high-temp. unbalanced or balanced plasma to form an oxygen-based active specied 28, hence a film is formed, and an oxide superconductor thin film excellent in superconductivity is obtained.
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