发明名称 |
A SEMICONDUCTOR LASER AND A METHOD OF PRODUCING THE SAME |
摘要 |
<p>A semiconductor laser and a method of producing the same wherein the semiconductor laser is produced by forming a stripe-shaped projection on the surface of a semiconductor substrate, and forming multilayered thin films with a double heterostructure including an active layer on said semiconductor substrate by using the metal organic chemical vapor phase epitaxial growth method or the molecular beam epitaxial growth method. Thus, a buried stripe-structure semiconductor laser can be produced by a sequence of crystal growth processes.</p> |
申请公布号 |
EP0157555(B1) |
申请公布日期 |
1990.10.03 |
申请号 |
EP19850301989 |
申请日期 |
1985.03.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YOSHIKAWA, AKIO;SUGINO, TAKASHI |
分类号 |
H01S5/227 |
主分类号 |
H01S5/227 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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