发明名称 A SEMICONDUCTOR LASER AND A METHOD OF PRODUCING THE SAME
摘要 <p>A semiconductor laser and a method of producing the same wherein the semiconductor laser is produced by forming a stripe-shaped projection on the surface of a semiconductor substrate, and forming multilayered thin films with a double heterostructure including an active layer on said semiconductor substrate by using the metal organic chemical vapor phase epitaxial growth method or the molecular beam epitaxial growth method. Thus, a buried stripe-structure semiconductor laser can be produced by a sequence of crystal growth processes.</p>
申请公布号 EP0157555(B1) 申请公布日期 1990.10.03
申请号 EP19850301989 申请日期 1985.03.22
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YOSHIKAWA, AKIO;SUGINO, TAKASHI
分类号 H01S5/227 主分类号 H01S5/227
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