发明名称 |
Circuit and procedure for detecting an electric current flow in a MOS-transistor. |
摘要 |
<p>The invention concerns a device for detecting the flow of a current smaller than a given threshold current in a load (L) in series with an MOS power transistor (M1). The free terminal of the MOS transistor is connected to the first terminal (1) of a power supply whose second terminal (2) is connected to the free terminal of the load (L). The gate (G1) of the MOS transistor is connected to a control source (3). A means (11) for detecting a voltage drop is connected to the terminals of the MOS transistor. A feedback loop (12) applies an appropriate gate voltage to the MOS transistor as soon as the voltage drop at its terminals tends to fall below a predetermined level.
<IMAGE>
</p> |
申请公布号 |
EP0389383(A2) |
申请公布日期 |
1990.09.26 |
申请号 |
EP19900420022 |
申请日期 |
1990.01.16 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
BAROU, MICHEL |
分类号 |
G01R19/175;H03G3/30;G01R31/26;H03G3/02 |
主分类号 |
G01R19/175 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|