发明名称 Circuit and procedure for detecting an electric current flow in a MOS-transistor.
摘要 <p>The invention concerns a device for detecting the flow of a current smaller than a given threshold current in a load (L) in series with an MOS power transistor (M1). The free terminal of the MOS transistor is connected to the first terminal (1) of a power supply whose second terminal (2) is connected to the free terminal of the load (L). The gate (G1) of the MOS transistor is connected to a control source (3). A means (11) for detecting a voltage drop is connected to the terminals of the MOS transistor. A feedback loop (12) applies an appropriate gate voltage to the MOS transistor as soon as the voltage drop at its terminals tends to fall below a predetermined level. &lt;IMAGE&gt; </p>
申请公布号 EP0389383(A2) 申请公布日期 1990.09.26
申请号 EP19900420022 申请日期 1990.01.16
申请人 SGS-THOMSON MICROELECTRONICS S.A. 发明人 BAROU, MICHEL
分类号 G01R19/175;H03G3/30;G01R31/26;H03G3/02 主分类号 G01R19/175
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