发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent deterioration of the reliability by providing a metal layer being thicker than the height of a stripelike protrusion just above an active region, on a region other than the stripelike protrusion. CONSTITUTION:A metal layer 13 being thicker than the height of a stripelike protrusion 8 just above an active region is provided on a region other than the stripelike protrusion 8. Accordingly, the stripelike protrusion 8 just above a laser oscillation region does not come to touch a heat sink 14 directly and no stress is applied to the laser oscillation region, as the height of the metal layer 13 is higher than that of the stripelike protrusion 8 in the case of assembly by a junction-down method. This makes it possible to prevent deterioration of the reliability caused by assembly.</p>
申请公布号 JPH02239678(A) 申请公布日期 1990.09.21
申请号 JP19890060206 申请日期 1989.03.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAGI TETSUYA;HIRONAKA MISAO;YOSHIDA KAZUTOMI
分类号 H01S5/00 主分类号 H01S5/00
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