| 摘要 |
PURPOSE:To enable a GaAs integrated circuit to be formed without complicating the process by respectively connecting plural P-N junction diodes in series between each input/output signal line and power source, and connecting at least one of P-N junction diodes so that it may be reverse to other diodes. CONSTITUTION:Two P-N junction diodes 1 and 2, which are connected reversely with each other, are put between an input/output signal line and a grounding power source line. For these protective diodes, the P-N junction diode 1 works as a protective diode to positive surge, and the P-N junction diode 2 functions as a protective diode to the negative surge. By using P-N junction as a protective diode this way, larger electrostatic breakdown strength can be obtained with small area as compared with the case where Schottky junction is used. Accordingly, a drawing-out electrode will do, so long as it is taken out to an N-type GaAs region, and there is no special need to add a process anew for formation of a protective diode. Hereby, a GaAs integrated circuit of high yield rate can be realized. |
