| 摘要 |
PURPOSE:To prevent any undesired residue from being interposed between a semiconductor optical active layer and a second electrode film by electrically connecting a first connection part of a first electrode film and a second connection part of the second electrode film in series by irradiating the second connection part of the second electrode film with an energy beam. CONSTITUTION:First electrode films 3a-3c, a semiconductor optical active layer 4 substantially over the whole surface of a substrate 1, and second electrode films 5a-5c are formed in this order. Second connection portions 5ae-5ce of the second electrode films 5a-5c are irradiated at least at ends thereof with an energy beam to electrically connect the first electrode films 3a-3c and the second electrode films 5a-5c. With the irradiation of the energy beam all second connection portions 5ae, 5be are fused at the ends of the second connection portions 5ae-5be, and the semiconductor optical active layer 4 at that portion is evaporated and removed. Hereby, any undesired residue is prevented from intervening between the semiconductor optical active layer 4 and the second electrode films 5a-5c. |
