发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 PURPOSE:To obtain a good pattern profile having a high resolution by incorporating a specific quinone diazide ester compd. and a specific cresol formaldehyde novolak resin into the compsn. CONSTITUTION:A photosensitive agent and the alkaline soluble novolak resin are incorporated into the compsn. The photosensitive agent contains the 1,2- nephthoquinone diazide ester compd. of 2,4,4'-trihydroxybenzophenone of >=50mol% average degree of esterification. The alkaline soluble novolak resin is not particularly limited if the resin is the novolak resin soluble in an aq. alkaline soln. The resin obtd. by condensing a mixture contg. m-cresol, p-cresol and xylenol and the formaldehyde is used. The good resist profile is obtd. in this way and the excellent resolution is obtd.
申请公布号 JPH02222954(A) 申请公布日期 1990.09.05
申请号 JP19890043994 申请日期 1989.02.23
申请人 CHISSO CORP 发明人 ITAMI SETSUO;KATO KOICHI;MAEHARA HIROSHI
分类号 C08F2/44;C08F2/50;G03F7/022;H01L21/027 主分类号 C08F2/44
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