| 摘要 |
PURPOSE:To make a P-N junction capacity small by a method wherein at least either a source part or a drain part in a switching MISFET is constituted of a low-concentration diffusion region and a high-concentration electrode is formed so as to come into contact with the diffusion region. CONSTITUTION:At least with a source part or a drain part in a switching MISFET 12 formed just under a main face of a semiconductor main body is constituted of low-concentration diffusion regions 16, 17; in addition, high- concentration electrodes 10, 11 composed of an epitaxial layer are formed so as to come into contact with the diffusion regions 16, 17. Accordingly, a depletion layer is spread largely; it is permitted that the depletion layer is spread inside the electrodes 10, 11 composed of the epitaxial layer; accordingly, it is possible to restrain the depletion layer from being spread to the side of the source part or the drain part. Thereby, it is possible to obtain a semiconductor device whose P-N junction capacity is small and in which a punchthrough phenomenon is hard to cause. |
