发明名称 METHOD FOR MANUFACTURING CUINSE2 THIN FILM BY VACUUM EVAPORATION OF DUAL COMPOUND
摘要 PURPOSE: A method for manufacturing a CuInSe2 thin film by vacuum evaporation of a dual compound is provided to form the CuInSe2 single layer for a high-efficiency solar cell which can be obtained by a conventional process like a three stage process using metal elements and a selenization process, by using a vacuum evaporation method regarding a Se-based dual compound like Cu2Se/In2Se3 and Se. CONSTITUTION: A Se-based dual compound like Cu2Se/In2Se3 and Se used as simultaneous evaporation materials are sequentially evaporated in a vacuum state of a vacuum evaporation chamber while the temperature of a substrate varies.
申请公布号 KR20020007777(A) 申请公布日期 2002.01.29
申请号 KR20000041222 申请日期 2000.07.19
申请人 KOREA INSTITUTE OF ENERGY RESEARCH 发明人 AHN, BYEONG TAE;LEE, DU YEOL;SONG, JIN SU;YOON, GYEONG HUN
分类号 H01L31/0256;(IPC1-7):H01L31/025 主分类号 H01L31/0256
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