发明名称 |
METHOD FOR MANUFACTURING CUINSE2 THIN FILM BY VACUUM EVAPORATION OF DUAL COMPOUND |
摘要 |
PURPOSE: A method for manufacturing a CuInSe2 thin film by vacuum evaporation of a dual compound is provided to form the CuInSe2 single layer for a high-efficiency solar cell which can be obtained by a conventional process like a three stage process using metal elements and a selenization process, by using a vacuum evaporation method regarding a Se-based dual compound like Cu2Se/In2Se3 and Se. CONSTITUTION: A Se-based dual compound like Cu2Se/In2Se3 and Se used as simultaneous evaporation materials are sequentially evaporated in a vacuum state of a vacuum evaporation chamber while the temperature of a substrate varies.
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申请公布号 |
KR20020007777(A) |
申请公布日期 |
2002.01.29 |
申请号 |
KR20000041222 |
申请日期 |
2000.07.19 |
申请人 |
KOREA INSTITUTE OF ENERGY RESEARCH |
发明人 |
AHN, BYEONG TAE;LEE, DU YEOL;SONG, JIN SU;YOON, GYEONG HUN |
分类号 |
H01L31/0256;(IPC1-7):H01L31/025 |
主分类号 |
H01L31/0256 |
代理机构 |
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地址 |
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