| 摘要 |
PURPOSE:To effectively perform a passivation of the surface of a semiconductor layer for forming a junction and to remarkably improve conversion efficiency of a solar cell by providing a n-type or p-type layer having a lower carrier Concentration on the surface of a n<+> type or p<+> type layer having high carrier concentration. CONSTITUTION:Reference numerals 1, 2 and 3 are p-, n<+> and p<+> type layers, and 8 and 9 are low concentration n-and p-type layers. Numerals 4 and 5 are SiO2 films for passivation. The n<+>/p-type of the above structure is formed hy diffusing technique using normal POCl3 gas in a p-type single crystalline Si substrate 1. Carrier concentration distribution of the layer 2 is obtained at 850 deg.C of diffusing temperature and 30 min of time. A multilayer reflection preventive layer 10 is provided on the surface of a solar cell of this structure, and measurement is executed under quasi-solar light. As a result, 25% of efficiency is obtained. |
