| 摘要 |
PURPOSE:To contrive the improvement of a bonding efficiency by a method wherein a fine gold alloy wire, which is formed of a specified amount of specified metals with the remnant consisting of a specified metal and an inevitable impurity, is used. CONSTITUTION:When a semiconductor element is bonded to an Al electrode using a fine gold alloy wire, which contains one kind or more of Ni, Cu and Mn by 100 to 10000wt.ppm in total with the remnant consisting of Au and inevitable impurity, the formation of metallic compounds of Au and each of Ni, Cu and Mn is inhibited even at the time of use of the wire in a high- temperature environment, the circularity of the wire at the time of a ball-up is increased and a bonding efficiently is improved without increasing the thickness of an Au-Al compound. |
