发明名称 BI-DIRECTIONAL DOUBLE NMOS SWITCH
摘要 A semiconductor switch comprises two NMOS transistors coupled in an anti-series arrangement, and a gate control circuit coupled to both gates of the NMOS transistors. Both drains of the NMOS transistors are interconnected, and the gate control circuit is coupled to the drains interconnection. The required chip area is halved compared to prior art switches. Pumping the gates to higher voltages may cause a further reduction of the sizes of the NMOS transistors. In addition advantageously a large range of input and output voltages can be allowed between the sources of the NMOS transistors, whereby the sources act as input and output respectively of the switch, thus allowing application of the switch in a broad technical field.
申请公布号 KR20050061574(A) 申请公布日期 2005.06.22
申请号 KR20057007347 申请日期 2005.04.28
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 DE CREMOUX GUILLAUME;CHRISTOFOROU YOVGOS;VAN LOO INSUN;DIKKEN JAN;NIEUWHOFF FERRY;KENC AYKUT;WILLEMSEN WILHELMUS J.R.
分类号 H03K17/06;H03K17/687;(IPC1-7):H03K17/687 主分类号 H03K17/06
代理机构 代理人
主权项
地址