发明名称 Semiconductor device with matrix wiring section - has three conductive layers separated by insulating layers, semiconductor, and doped contact layer
摘要 <p>The photoelectric converter has a photoelectric conversion element unit (1), a capacitor unit (2), a thin film transistor unit (3), an illumination window (4) and a matrix wiring unit (5). The wiring unit consists of one conductive layer (22), an insulating layer (23) a second conductive layer (24), a second insulating layer (25), a semiconductor (26), a doped contact layer (27) and a third conductive layer (28). A protective polyimide layer (29) is also provided and the structure of the device enables the units to be formed simultaneously.</p>
申请公布号 DE4005494(A1) 申请公布日期 1990.08.23
申请号 DE19904005494 申请日期 1990.02.21
申请人 CANON K.K., TOKIO/TOKYO, JP 发明人 KOBAYASHI, ISAO, ATSUGI, KANAGAWA, JP;KAIFU, NORIYUKI, YOKOHAMA, KANAGAWA, JP;SAIKA, TOSHIHIRO, HIRATSUKA, KANAGAWA, JP;ENDO, TADAO, ATSUGI, KANAGAWA, JP;SHIMADA, TETSUYA, ZAMA, KANAGAWA, JP
分类号 H01L27/146;H04N1/193 主分类号 H01L27/146
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