发明名称 |
Process for making integrated circuit with doped silicon dioxide load elements |
摘要 |
An integrated circuit which uses vertical current flow through arsenic-implanted oxide films to provide low-current loads. These load elements provide a compact four-transistor SRAM which has very simple fabrication and very low power consumption.
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申请公布号 |
US4950620(A) |
申请公布日期 |
1990.08.21 |
申请号 |
US19880252268 |
申请日期 |
1988.09.30 |
申请人 |
DALLAS SEMICONDUCTOR CORP. |
发明人 |
HARRINGTON, III, THOMAS E. |
分类号 |
G11C11/412;G11C11/417;H01L21/02;H01L21/8244;H01L27/11 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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