| 摘要 |
PURPOSE:To form by the electrolytic plating with high performance a metal as the wiring material on the surface of semiconductor wafer by providing the semiconductor wafer supporting means at the circumference of opening of the plating area, providing the cathode electrode on the upper surface which will becomes the non-plated surface of semiconductor wafer placed on said supporting means and by pressing down the semiconductor wafer on the supporting means using a spring material for said cathode electrode. CONSTITUTION:The inclined liquid exhausting hole 21a which is inclined downward to the external circumference from the internal circumference of the plating area 21 is opened at the upper portion of the plating area 21 and the wafer supporting means 27 are provided at three to four positions with a constant interval at the opening circumference of the plating area 21. 25 is a semiconductor wafer on which the plated wiring is formed and the semiconductor wafer 25 is placed on the supporting means 27 with the area to be plated opposed to the net 23a. Thereafter, the cathode electrode 22 which will becomes the negative terminal during the plating is deposited on the upper surface (non-plated surface) of the semiconductor wafer 25. Since this cathode electrode 22 is composed of a spring material works as the wafer clamping spring 14, it presses downward the upper surface of semiconductor wafer 25 on the supporting means 27. |
