| 发明名称 |
Method of manufacturing a semiconductor device using electroless metallisation. |
| 摘要 |
<p>By using a nucleating solution having a low concentration of PdCl2 at an increased temperature, contact holes can be nucleated in a selective manner and, subsequently, metallized in an electroless bath, said contact holes being etched by means of plasma etching in dielectric layers of VLSI devices having a silicon semiconductor body.</p> |
| 申请公布号 |
EP0382298(A1) |
申请公布日期 |
1990.08.16 |
| 申请号 |
EP19900200241 |
申请日期 |
1990.02.02 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
VAN DER PUTTEN, ANDREAS MARTINUS THEODORUS PAULUS |
| 分类号 |
H01L21/28;C23C18/31;H01L21/288;H01L21/768 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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