| 摘要 |
PURPOSE:To prevent both deterioration of operating speed and increasing of power consumption in using a general basic cell by using a general purpose type LSI to constitute the subject device and clamping a collector voltage of a memory transistor with a transistor for clamping. CONSTITUTION:A circuit constitution of a memory cell is composed of one pair of multiemitter NPN memory transistors 1 and 2 for storing information, which are formed by cross-coupling their bases and collectors and commonly connecting one emitter, a clamping NPN transistors 3 and 4 for clamping each collector voltage of individual memory transistors 1 and 2 and resistance element connecting bodies 5-7 for setting the clamp voltage at a prescribed potential. By this method, the memory cell can be constituted by using the basic cell of a master slice system, and both deterioration of operating speed and increasing of power consumption can be prevented. |
