| 摘要 |
PURPOSE:To generate hardly soluble layers on the surface of the nonexposed parts of a resist and to increase the latitude of exposing time and developing time by bringing the positive resist into reaction with xylene after exposing and before developing at the time of applying the positive resist on a wafer and forming prescribed resist patterns by exposing the resist through a mask and developing the same. CONSTITUTION:The positive resist 2 is applied on the Si wafer 1 and the mask 3 constituted by forming prescribed patterns 3b consisting of Cr, etc., on a substrate 3a consisting of glass, etc., is imposed thereon. The resist is then subjected to exposing, by which the exposed parts 2a corresponding to windows exclusive of the patterns 3b and the nonexposed parts 2b corresponding to the patterns 3b are generated in the resist 2. The resist 2 is decomposed by the exposing in the exposed parts 2a. The wafer 1 is thereafter immersed into a reaction chamber 5 filled with the soln. of the xylene 4 to bring the nonexposed parts 2b and the xylene 4 into reaction by which the hardly soluble layers 2c hardly soluble in a developing soln. are formed near the surfaces of the nonexposed parts 2b. The developing speed of the resist is then in order of the hardly soluble layers 2c<the nonexposed parts 2b<the exposed parts 2a and the high contrast is obtd. |
