| 摘要 |
The memory device has cells in which the source electrode is buried inside a trench capacitor. The device is prepared by sputterig a BPSG (borophospor silicate glass) thin film (41), etching it to form a first trench (27), forming a predetermined patterm filling a first polysilicon (40) on the inside of the first trench (27), sputtering a second polysilicon (37), forming a pattern of the second trench; sputering a third polysilicon; and implanting As ions of 5 x 1015 cm-2 to form a drain (35) and buried source (33).
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