| 摘要 |
<p>PURPOSE:To produce the active matrix substrate by simplification of stages by subjecting the a-Si layer of diodes to photodeterioration by irradiation of strong light and imparting the higher resistance to the a-Si layer to decrease the leak current in a transverse direction. CONSTITUTION:The light of the prescribed intensity falls onto the a-Si layer 1 between a picture element electrode 3 and a wiring metallic film 4 when an (i) layer film 12 consisting of amorphous Si is irradiated with the above- mentioned light from the side of a glass substrate 2. Since both a (p) layer film 11 and an (n) layer film 13 are high in defect density, the photodeterioration does not appear distinctly but the electrical conductivity of the (i) layer film 12 degrades. The (i) layer film 12 having 1X10<-7>(OMEGAcm)<-1> is, therefore, formed eventually if a film having, for example, 1X10<-6>(OMEGAcm)<-1> is used as the (i) layer film prior to the irradiation of light. The active matrix substrate for liquid crystal display which is decreased in the restriction the characteristics of the diodes or the conditions for producing the diodes is, therefore, produced.</p> |
