SILICON PHOTO DIODE FOR LOW SENSING

摘要

The photo diode is manufactured by steps; (a) forming a N type well (2) by diffusing the P ion on a P type wafer (1); (b) forming a field oxide layer on an active field region; (c) forming a high density N+ region (3) by diffusing the As ion; (d) forming a high density P+ region (4) by diffusing the B ion; (e) and forming a non-reflective and metal layer. The P+ guide ring region (5) surrounds the diffused regions (3,4).