| 摘要 |
<p>PURPOSE:To make a limit voltage characteristic excellent, to enhance a current breaking performance and to restrain a molten and short-circuit destruction by providing a junction part between a region composed of ZnO or composed mainly of ZnO and a region containing a Bi-alkaline earth-Cu oxide. CONSTITUTION:When an energy barrier 5 at an interface between a ZnO layer 1 and a Bi-alkaline earth-Cu oxide layer 2 is formed on one face of the oxide layer 2, the barrier 5 is forward-biased when an electrode 3 is set as an anode because ZnO is normally an n-type semiconductor, an electric current easily flows; when an electrode 4 is set as the anode, the energy barrier 5 is reversebiased; it is possible to obtain an element which displays an asymmetrical voltage nonlinear property by which an electric current is suddenly started to flow at a definite voltage or higher. When energy barriers 5 are formed on both sides of the Bi-alkaline earth-Cu oxide layer 2, one barrier is forward- biased and the other barrier is reverse-biased even when any electrode is set to be positive; the reverse-biased barrier becomes dominant; it is possible to obtain a non-ohmic property where a positive pole and a negative pole are symmetrical.</p> |
