发明名称 |
METHODS AND APPARATUS FOR MATERIAL DEPOSITION |
摘要 |
Methods and apparatus for depositing thin films of complex (compound) materials, including ferroelectrics, superconductors, and materials with high dielectric constants by photo/plasma-enhanced chemical vapor deposition from stabilized compound sources. Multiple heating (10, 12) and/or spectral energy sources (8) are used for applying high energy, rapid thermal pulses in a precise timed sequence. Sol-gels of compound sources are ultrasonically atomized before being introduced to a deposition chamber (2). |
申请公布号 |
WO9007390(A1) |
申请公布日期 |
1990.07.12 |
申请号 |
WO1989US05882 |
申请日期 |
1989.12.27 |
申请人 |
SYMETRIX CORPORATION |
发明人 |
MCMILLAN, LARRY, D.;PAZ DE ARAUJO, CARLOS, A. |
分类号 |
C23C16/44;C23C16/448;C23C16/455;C23C16/46;C23C16/48;C23C16/50;C23C16/515;C23C16/52;C23C18/12;C30B7/00;H01L21/02;H01L21/314;H01L21/316 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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