发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the exfoliation of a polyimide layer insulating film or a polyimide-spacer from a section on the inorganic insulating film of a lower layer due to heat load and a hot and humid atmosphere and the like by densely forming a dummy wiring material pattern, a thermal expansion coefficient thereof approximates to a polyimide layer and which has strong adhesive strength, into a region in which the inorganic insulating film is directly coated with the polyimide layer insulating film or the polyimide-spacer. CONSTITUTION:A concave section between lower layer wiring shaped between source wiring 28 and both source wiring 28 and drain wiring 29 and the like is flatly filled with the polyimide layer 32', a PSG layer insulating film 35 having approximately 0.5-1[mum]is formed onto the polyimide layer 32' and lower layer wiring 28, 29, 30 and the Al dummy-patterns 31a, 31b, and upper layer Al wiring 34 connecting the drain wiring 29 of a lower layer and the lower layer wiring 30 drawn out of a protective diode, etc. through through- holes 33a, 33b is shaped onto the PSG layer insulating film 35.
申请公布号 JPS5846653(A) 申请公布日期 1983.03.18
申请号 JP19810145321 申请日期 1981.09.14
申请人 FUJITSU KK 发明人 UCHIYAMA YORIHIRO
分类号 H01L21/768;H01L21/31;H01L21/47;H01L23/522 主分类号 H01L21/768
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