| 摘要 |
<p>PURPOSE:To improve the aperture rate of picture elements and to obtain high resolution even when on resistance is reduced by forming a switching transistor(TR) of a thin film TR with high mobility and forming this thin film TR under a signal line. CONSTITUTION:For example, signal lines 3 and selection lines 3 are formed linearly and a rectangular area enclosed with the selection lines 3 and signal lines 4 and a display electrode 1 which is so shaped as to extend to below the signal lines 4 are formed. Then extremely thin TRs 2 which are thin and long having the small ratio W/L of the channel width W and channel length L and has the high mobility are formed at the intersections of the signal lines 4 and selection lines 3. Consequently, even when the on resistance of the switching TR is decreased, the aperture rate of the picture element can be improved and the high resolution is realized.</p> |
