| 摘要 |
PURPOSE:To stabilize yield by providing the first and second poly-Si wiring layers laminated on the semiconductor substrate and the connecting windows of the electrode wiring layers in the not-overlapping area. CONSTITUTION:Locations of connecting area A of the first poly-Si layer 3 and second poly-Si layer 6 and the windows 8, 9 of the resist mask 10 are shifted. When a window is opened on the third insulating film 7 by the etching, since the thickness of film 7 is equal at the windows 8, 9, any part of film does not remain and excessive etching is not carried out, and the equal etching end condition can be obtained at the holes 8 and 9. Therefore, in case the electrode wiring layer is formed thereon, a high quality apparatus can be obtained with stabilized yield. |
