| 摘要 |
PURPOSE:To increase resistance to environments and at the same time, reduce required laser power for recording and deletion by specifying the flow ratio Q of hydrocarbon in an atmosphere of rare gas and hydrocarbon gas with a target of Sb, Te, Ge alloy of specific composition, forming a recording film using sputtering technique and laminating a dielectric film thereto. CONSTITUTION:(SbTe1-x)yGe1-y(0.05<=x<=0.04<=y<=0.8) alloy is used as a target and air is exhausted from a container by pumps 18, 19. Next, argon gas is introduced into the container from a gas line 20 and CH4 gas from a gas line 21 so that the mixture ratio Q of CH4 is 5%<=Q<=50%. Thus the container is maintained at a specified internal pressure level. Then power is applied to a sputtering source 24 for a specified time while a substrate 12 is rotated. The amount of sputtered elements from the sputtering source is monitored with a monitoring device and thereby power charged into the sputtering source is adjusted. Consequently, a recording layer 13 is formed on the substrate 12, and if a film becomes thick enough to form a specified layer, only argon is allowed to flow in with a dielectric such as SiO2 as a target to a film formed by sputtering. Subsequently, a dielectric protecting film 14 is laminated on the recording film 13. |
