| 摘要 |
<p>PURPOSE:To improve the asymmetry of a voltage-current characteristic and to improve image quality and capacity by providing an amorphous Si layer doped with boron between the metal having a metal-insulator-metal structure and an insulator. CONSTITUTION:A lower glass substrate 1 is coated with a protective layer 2 consisting of SiO2, etc. Cr is formed as a metal electrode thereon and is patterned to an island shape to form lead electrodes 3. After an a-Si layer 4 doped with the boron is formed by a glow discharge cracking method, an Si nitride layer 5 and an a-Si layer 6 are successively formed by the glow discharge cracking method. An upper electrode 7 consisting of Cr and a lower transparent electrode 12 consisting of ITO are formed thereon. An upper transparent electrode 10 is formed on an upper glass substrate 8 and if necessary, a glass protective film 9 is formed. The substrates 1 and 8 are subjected to an orientation treatment and are then stuck to each other via spacers. An 7N liquid crystal 11 is injected into the cell after sealing.</p> |
