| 摘要 |
PURPOSE:To improve the areal efficiency of the title transistor by forming the gate electrode of the transistor to have a closed loop-like form bent in the opposite direction a plurality of times so as to divide a diffused layer formed region into one source region and at least four drain regions. CONSTITUTION:This MIS transistor is provided with a diffused layer forming region 40 partitioned to a rectangular form by field oxide films formed on a semiconductor Si substrate, a gate electrode 6 formed of a poly-silicon film on the region 40 through a gate oxide film, and a source region and drain regions respectively formed of diffused layers formed by diffusion or ion implantation in the region 40 with the gate electrode 6 in between. The gate electrode 6 is formed to have a closed loop-like form bent in the opposite direction a plurality of times so as to divide the region 40 into the one cross-shaped source electrode 1 and four square drain regions 20-23. Therefore, the channel width per unit area can be widened and the integration density of the integrated circuit can be increased. |
