Three-dimensionally stacked LSI.

摘要

Disclosed is a three-dimensionally stacked LSI having a plurality of integrated-circuit layers stacked together, each of which is equipped with a plurality of circuit elements (2, 10, 16). Each of the circuit elements are equipped with a power terminal (4) of its own, which is connected through interlayer via-hole wiring (22) to the power wiring of the uppermost integrated-circuit layer. The power wiring of the uppermost integrated-circuit layer is formed of a metal exhibiting a low electrical resistance, for example, Al, whereas the metal wirings of the other layers, which are exposed to high temperatures when forming the upper layers, are formed of W.