发明名称 HOSOMAKUKEISEIHOHO
摘要 PURPOSE:To form a small scale exhaust gas even when the diborane gas as the raw material by depositing boron film on a substrate through glow discharge decomposition of diborane, causing an inactive gas ion to collide with such film considered as the target and adhering the emitted boron onto a heated base material. CONSTITUTION:A target 19 where a boron film is formed on the surface of stainless steel substrate is attached to an upper negative electrode 2 in the sputtering method and a base material 20 on which a boron film is to be formed is placed on a lower positive electrode 3. First, exhaustion adjusting valve 5 is fully opened, a reaction vessel 1 is vacuumed by the exhaust system, a gas flow adjusting device 10 and a reduction valve 22 are opened. Thereby, argon is supplied into the reaction vessel 1 from the argon gas bomb 21 to set the inside of vessel 1 to the specified pressure. Thereafter, a voltage is applied across both electrodes 2, 8 by a DC stabilized power supply 14 to generate glow discharge and a boron film is formed on the surface of a base material 20. Accordingly, a poisonous diborane is used only for manufacture of target and is not used for sputtering.
申请公布号 JPH0228892(B2) 申请公布日期 1990.06.27
申请号 JP19830129211 申请日期 1983.07.15
申请人 FUJI DENKI SOGO KENKYUSHO KK 发明人 SEKI YASUKAZU;SATO NORITADA
分类号 C01B35/02;C23C14/14;C23C16/50;H01L21/22;H01L21/31;H01L21/314 主分类号 C01B35/02
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