| 摘要 |
PURPOSE:To suppress the effect of electromigration so as to realize high integration by forming a first V power source line and a first GND power source line by a first aluminium layer on standard cell rows, and forming a second VCC power source line and a second GND power source line about it by a third aluminum layer. CONSTITUTION:In standard cell rows 11a and 11b, the parts to become first VCC power source lines 12a and 12b and first GND power source lines 13a and 13b are formed respectively into specified shape by patterning with a first aluminum layer. And a second aluminum layer is patterned in the direction crossing the furst VCC power source lines 12a and 12b and the first GND power source line 13a and 13b at right angles so as to form VCC power source buses 19a and 19b and GND power source buses 20a and 20b. Further, at an uppermost layer position, second VCC power source lines 21a and 21b, and second GND 22a and 22b power source lines are formed by patterning a third aluminum layer in the same direction as the first VCC power source lines 12a and 12b. Hereby, a highly integrated circuit having high reliability can be obtained. |
