发明名称 Processing apparatus for semiconductor wafers
摘要 A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include abrasive particles such as silica powder.
申请公布号 US4932168(A) 申请公布日期 1990.06.12
申请号 US19880177784 申请日期 1988.04.05
申请人 TAIYO SANSO CO;MITSUBISHI DENKI KK 发明人 TADA, MASUO;HATA, TAKEKI;FUKUMOTO, TAKAAKI;OHMORI, TOSHIAKI
分类号 B08B7/00;B24C1/00;B24C3/32;F25C1/00;H01L21/306;H01L21/322 主分类号 B08B7/00
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