发明名称 Gas sensitive device
摘要 A gas sensitive device, for example a gas sensitive MISFET (FIGS. 1 to 3) has a gas-sensitive electrode (15) comprising a catalytically active metal (e.g. Pt or Pd) and a non-metallic material (e.g. SiO2) mixed with, or deposited at an exposed surface of, the metal to modify the catalytic activity of the metal. The electrode has an enhanced sensitivity to, and selectivity of, certain gases. The composite material is applicable to other gas-sensitive devices, e.g. an optical fibre gas sensor.
申请公布号 US4931851(A) 申请公布日期 1990.06.05
申请号 US19870025049 申请日期 1987.03.12
申请人 THORN EMI PLC 发明人 SIBBALD, ALASTAIR;WEBB, BRIAN C.;ROBINS, IAN;ROSS, JOHN F.;BELL, EDWARD C.
分类号 G01N27/00;G01N27/414;H01L29/78 主分类号 G01N27/00
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