| 摘要 |
PURPOSE:To obtain high performance and long-term reliability by forming an a-SiC surface layer on an org. semiconductor layer, thereby enhancing the hardness of the surface of the photosensitive body, obviating the generation of out-of-focus images, enhancing the photosensitivity and surface potential and lowering the residual potential. CONSTITUTION:The 1st amorphous silicon carbide (a-SiC) layer 2 having p type conductivity, an org. photosemiconductor layer 3, and the 2nd amorphous silicon carbide layer 4 having photoconductivity are successively laminated on a conductive substrate 1. The element ratios of the 2nd a-SiC layer 4 are specified within a 0.01<x<0.5 range in the x value of the compsn. formula Si1-xCx. The higher surface hardness than the org. photosemiconductor layer 3 is obtd. and the excellent photoconductivity is obtd. if the x value is within the 0.01<x<0.5 range. The hardness of the surface of the photosensitive body is enhanced in this way and the electrophotographic characteristics, such as photosensitivity, surface potential and residual potential, are improved and the long-term stability is obtd. |
