| 摘要 |
PURPOSE:To solve a defect that a wiring part becomes thin and that an imbalance of a pattern is caused without changing a manufacturing apparatus and a process by a method wherein an irregular pattern region and a regular pattern region are set to an identical condition in a dummy pattern region. CONSTITUTION:In a core part of a semiconductor memory, a cell array and a pattern layout (including a material) are set to an identical condition at the following: a row decoder 10 used to select a word line; a column decoder 11 used to select a bit line; memory cell arrays 1 to 5; dummy patterns 411 to 415 arranged at outer peripheries of the cell arrays; a dummy pattern 4110 at the inside. When a patterning operation is executed in this constitution, the cell arrays 1 to 5 which operate actually can be patterned under the identical condition (identical repeated patterns 411 to 415 up and down and right and left) because the dummy patterns are arranged at the outer peripheries and the inside of the cell arrays. Thereby, it is possible to prevent a defect (a thin wiring part or a disconnection) which is easily caused at the outer peripheries of the cell arrays or in the neighborhood of a tap of the word line. |
