| 摘要 |
<p>PURPOSE:To obtain a symmetric type resistor whose nonlinear coefficient is large, whose threshold voltage can be controlled, which is thin and can be reduced in size, and which enables stability of characteristics to b e obtained by a method wherein a resistor has a laminated film consisting of a thin zinc oxide film layer, a thin lead oxide film layer and a thin zinc oxide film layer wherein a specific amount of cobalt oxide is added to the thin zinc oxide film layers. CONSTITUTION:A resistor has a laminated thin film structure consisting of an insulating substrate 1, a lower electrode thin film layer 2 formed on the insulating substrate 1, a laminated film consisting of a thin zinc oxide film layer 3, thin lead oxide film layer 4 and a thin zinc oxide film layer 3 laminated sequentially on a required portion on the lower electrode thin film layer 2 and the insulating substrate 1, and an upper electrode thin film layer 5 formed on the laminated film, wherein cobalt oxide has been added to the thin zinc oxide film layers 3 by 0.5 to 2.0mol% expressed in terms of CoO. For example, fused quartz, sapphire, etc., may be used in the substrate 1 and gold, platinum, palladium, etc., may be used in the electrode thin film layers 2, 5. In addition, the thin zinc oxide film layer 3 and the thin lead oxide film layer 4 containing cobalt oxide are molded by means of high frequency magnetron sputtering at substrate temperature of 300 deg.C.</p> |
