发明名称 METHOD FOR FORMING AN INORGANIC THIN FILM ON A SUBSTRATE WITH USE OF A TARGET
摘要 <p>An inorganic thin film is deposited on a substrate by sputtering a sputter target by cathode sputtering in the vicinity of the substrate. To produce the target, at least two pulverulent starting components are mixed. The mixture is tempered if a uniform reaction product can be obtained in this process. It is powdered and the powder is deposited on a metallic base by plasma-jet spraying. This produces the target. Preferably, an oxide mixture is tempered which is a starting product for a superconducting ceramic material. In order to convert the thin film deposited to a superconducting state, it is treated for a prolonged time at temperatures of 300 DEG -800 DEG C. in an oxygen-containing atmosphere. The reaction product obtained on tempering may have, for example, the overall composition ZBamCunOx, where 1.5</=m</=2.5, 2</=n</=5 and 4</=x</=9, Z standing for at least one of the elements Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, or may have the overall compositions TlBalCamCunOx or BiSrlCamCunOx, where 0.3</=1</=3, 0.3</= m</=3, 0.3</=n</=3 and 2</=x</=11.</p>
申请公布号 JPH02111877(A) 申请公布日期 1990.04.24
申请号 JP19890216173 申请日期 1989.08.24
申请人 HOECHST AG 发明人 OIGEN MORATSUHA;MARUTSUERUSU POIKERUTO;GIYUNTERU SHIYUMITSUTO;HANSUUPEETAA SHIERUHI
分类号 C01G3/00;C01G1/00;C01G15/00;C01G29/00;C23C4/10;C23C14/08;C23C14/34;H01B13/00;H01L21/31;H01L39/24 主分类号 C01G3/00
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