MOS-SPEICHERZELLE MIT SCHWIMMENDEM GATE UND VERFAHREN ZU IHRER VERFERTIGUNG.

摘要

A two device floating gate MOS nonvolatile memory cell (8) including a floating gate memory device (20) coupled to a select device (22) wherein a thin tunnel dielectric region (32, 134) of insulation material between the substrate (10, 100) and floating gate (26, 26a, 26b) of the memory device (20) is located in an area above the channel of the memory device in the substrate (10, 100) and wherein an implanted region (33, 116) in the substrate (10) to facilitate the tunneling of carriers in and out of the floating gate (26, 26a, 26b) extends appreciably underneath the edges of the field oxide regions (13) forming the periphery of the sides of the channel of the memory device (20). A select device (22) is located in a series with the memory device (20). A process for fabricating this memory cell (8) is also disclosed wherein the doped tunneling region (33, 116) in the substrate (10, 100) is defined and implanted prior to definition of the field regions.