摘要 |
PURPOSE:To improve the accuracy of a pattern position by reducing the distortion of a support frame in the case of back-etching the support frame from the rear surface side thereof by disposing the central region of the upper surface of a membrane lower than the upper surface of the support frame. CONSTITUTION:A hole section 8a2 at the lower-half part is formed by forming mask patterns 6,... on the upper surface central region 4a of a membrane 4 and back-etching the lower surface of a support frame 8 corresponding to the upper surface central region 4a of the membrane 4. In an X-ray exposure mask 10 with such construction, since the upper surface central region 4a of the membrane 4 was disposed at a lower position than the upper surface 8b of the support frame 8, even if the lower surface of the support frame 8 opposite to the upper surface central region 4a of the membrane 4 is back-etched, any stress from the membrane is exerted on the lower side than the upper surface 8b of the support frame 8, so that deformation and distortion of the support frame 8 is reduced to improve the positional accuracy of the mask pattern 6 formed in the central region 4a on the upper surface of the membrane 4. |