发明名称 MASK FOR X-RAY EXPOSURE
摘要 PURPOSE:To improve the accuracy of a pattern position by reducing the distortion of a support frame in the case of back-etching the support frame from the rear surface side thereof by disposing the central region of the upper surface of a membrane lower than the upper surface of the support frame. CONSTITUTION:A hole section 8a2 at the lower-half part is formed by forming mask patterns 6,... on the upper surface central region 4a of a membrane 4 and back-etching the lower surface of a support frame 8 corresponding to the upper surface central region 4a of the membrane 4. In an X-ray exposure mask 10 with such construction, since the upper surface central region 4a of the membrane 4 was disposed at a lower position than the upper surface 8b of the support frame 8, even if the lower surface of the support frame 8 opposite to the upper surface central region 4a of the membrane 4 is back-etched, any stress from the membrane is exerted on the lower side than the upper surface 8b of the support frame 8, so that deformation and distortion of the support frame 8 is reduced to improve the positional accuracy of the mask pattern 6 formed in the central region 4a on the upper surface of the membrane 4.
申请公布号 JPH0290607(A) 申请公布日期 1990.03.30
申请号 JP19880243204 申请日期 1988.09.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 MORIIZUMI KOICHI
分类号 G03F1/22;H01L21/027 主分类号 G03F1/22
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