| 摘要 |
PURPOSE:To minimize the drop in alignment accuracy while improving the yield by forming a resist pattern on a substrate while finding the optimal exposure time and the correction value of an alignment position and controlling a treatment condition of an exposure treatment device every shot region. CONSTITUTION:A main control device 25 performs every two times of exposure (tested exposure and untested exposure) on a wafer W for finding the optimal exposure condition (the optimal exposure time T and alignment correction values DELTAX, DELTAY) every shot region of the wafer W by test exposure and for controlling exposure parameter of a stepper SR according to the optimal exposure condition by untested exposure in order to form a pattern of a reticle R on the wafer. By repeating aforesaid operation every wafer W, the uneven line width of a circuit pattern and a drop in alignment accuracy or the like can be minimized and as a result the yield also can be improved. |
