| 摘要 |
PURPOSE:To prevent deterioration of characteristics caused by breakage in GaAs epitaxial layers by adapting an upper electrode such that its part to be electrically welded to an interconnector is projected to the region outside an element. CONSTITUTION:On an Si substrate 1, there are provided a GaAs epitaxial layer 2 of a first conductivity type, a GaAs epitaxial layer 3 of a second conductivity type, an AlxGa1-xAs window layer 4 of the second conductivity type and an anti-reflection film 5. An upper electrode 6 is provided in a contact hole while its part to be welded is projected therefrom. Interconnectors 8 to which a solar cell is to be connected are connected to the part of the upper electrode 6 projected to a region outside the element and to a lower electrode, respectively, by electrically welding them. Since the connected part is projected to the region outside the element, the interconnector can be electrically welded to the upper electrode without causing any deterioration in characteristics due to breakage of the thin GaAs epitaxial layers by thermal stress for example. |
