| 摘要 |
PURPOSE:To provide a quantum well type semiconductor laser element, which has a low threshold current, is oscillative continuously at room temp., and easily manufacturable, by forming quantum well structure, wherein a quantum well layer is pinched by barrier layers, through a single growth of semiconductor layer by MBE method, and forming different electroconductive type within the quantum layer in quantum well structure. CONSTITUTION:Using a substrate 10 of III-V compound, in which a semiconductor growing surface 11 with mirror index at (n11)A-plane (n is integer and A is group III element surface), and a growing surface 12 having different mirror index from the first named growing surface 11 are arranged adjoiningly, a III-V compound semiconductor using group IV amphoteric element as dopant is grown both on these growing surface 11, 12 simultaneously by the MBE method. Thus a semiconductor layer 21 formed on the growing surface 11 of (n11)A is in p-type, while a semiconductor layer 22 formed on the other growing surface 12 is in n-type, and a p-n joint surface 23 is formed between them. Accordingly on the growing surfaces 11, 12 of the substrate 10 a quantum well structure is formed, wherein a clad layer, quantum well layer, and barrier layer are laminated alternately by III-V compound semiconductor, and p-n joint in the quantum well structure by forming clad layer one after another. This improves different activenesses of laser. |
