| 摘要 |
<p>PURPOSE:To decrease Al spikes in a contact hole so as to improve a semiconductor device in reliability by a method wherein a dummy contact hole not contributing the operation of a transistor is provided near to a contact hole contributing the operation of a transistor. CONSTITUTION:A dummy contact hole section 2 other than a contact hole section 1 conductive to the transistor operation is provided near to the contact hole section 1, and Si is made to diffuse into Al through the dummy contact hole section 2, whereby Al spikes are restrained from occurring in the active contact hole section 1. The dummy contact hole 2 is provided within such a distance from the contact hole section 1 that Si can diffuse within an annealing time. By these processes, the effect of restraining spikes from occurring can be realized and the failure such as an interlaminar current leakage or the like can be decreased.</p> |
