| 摘要 |
PURPOSE:To enable the title silicon carbide semiconductor device to be electrically activated sufficiently even if the device is implanted with group III element ion at around room temperature by a method wherein a silicon carbide semiconductor layer is implanted with silicon ion and group III element ion while a process to form a P type conductive layer is included. CONSTITUTION:A non-doped SiC single crystal layer 2 is deposited on an Si single crystal substrate 1. An SiO2 film 3 is formed on the whole surface of the single crystal layer 2 and then an opening is made in specified region on the SiO2 film 3. Next, an Si ion implanted layer 4 is formed by implanting Si(<28>Si<+>) ion in an opening part in the single crystal layer 2. Successively, a mixed ion implanted layer 5 with Si ion and B ion is formed by implanting B(<11>B<+>) ion in the implanted layer 4. Then, the mixed ion implanted layer 5 is activated to form a p type conductive layer 5' by annealing process in Ar atmosphere. Finally, Al electrodes 6 and 7 are formed by making openings in the specified regions in the film 3 to evaporate aluminum. |
