| 摘要 |
PURPOSE:To reduce man-hours required for characteristic evaluation by a method wherein a semiconductor wafer containing an active layer which emits a light is formed and V-grooves are formed on it to separate the wafer into semiconductor laser elements and a current is injected into each semiconductor laser element and a light output is measured and the semiconductor wafer is cut into the semiconductor laser element along the grooves. CONSTITUTION:Groves 9 are formed on a formed semiconductor wafer with an interval corresponding to a resonator length by reactive ion beam etching. A needle 10 is brought into contact with each semiconductor laser element separated by the grooves 9 and a metal plate 11 is brought into contact with the lower surface of an n-type side electrode 8. A current is injected into the semiconductor wafer and a light output emitted from a light emitting surface 12 is reflected vertically by an end surface 13 obtained by slant cutting and detected by a photodetector 14 to measure the light output and the current characteristics. At that time, the I-V characteristics, oscillation threshold currents, efficiencies and the like of the semiconductor laser elements are evaluated and the semiconductor laser elements which are judged to be not defective are cut along the grooves 9 and divided into respective semiconductor lasers. |
