| 摘要 |
<p>PURPOSE:To make it possible to modify characteristics by simply modifying the structure of a contact by a method wherein a resistor and wiring parts are connected to each other by a non-ohmic contact through an insulating film of such a thickness as a dielectric breakdown is generated by an applying voltage to a contact part. CONSTITUTION:The upper part of an Si substrate 1 is covered with a protective film 2 consisting of Si oxide and a window 3 for diffusion use is formed in this film 2 by photo-etching. If the substrate 1 is assumed to be an N<-> substrate, a resistor 4 is formed by diffusing a P-type region. Moreover, a protective film 5 consisting of Si oxide is formed, window openings for contact use are performed by photo-etching and a contact is made through wiring parts 7 consisting of Al. When these window openings for contact use are performed, an etching is performed in such a way that an insulating film 6 consisting of Si oxide is slightly left. Moreover, a non-ohmic contact is contrived so as to be able to be obtained in such a way that a pinhole contact is formed by dielectric breakdown at the time of the contact.</p> |
